Through-membrane electron-beam lithography for ultrathin membrane applications

Electron Beam Lithography for Applications in Nanotechnology

Nanotechnology, apart from being a catch phrase for media and funding, has a serious role for the development of future products in the field of information technology. Specifically, future generations of memory and logic chips depend strongly on the ability of nanolithography. In addition to the promising field of nanoelectronics, optoelectronics as well as photonic devices benefit from the po...

Electron-beam lithography applications at ETH Zurich

A triangular lattice of holes is etched deeply (> 3 μm) into the substrate using a combination of EBL and inductively coupled plasma reactive ion etching. Accuracy and reliability of the pattern transfer into the resist by EBL is ensured by using the NanoPECS software to correct for proximity effects. Devices are designed using 2D and 3D modelling tools and characterized using the End-Fire (por...

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling reg...

Dopant Driven Electron Beam Lithography

Introduction to Electron Beam Lithography

Electron Beam Lithography is a specialized technique for creating extremely fine patterns (~ 50 nm). Derived from the early scanning electron microscopes, the technique in brief consists of scanning a beam of electrons across a surface covered with a resist film sensitive to those electrons, thus depositing energy in the desired pattern in the resist film. The main attributes of the technology ...